Nexperia USA Inc. PMDPB58UPE,115

PMDPB58UPE-115 Nexperia USA Inc. PMDPB58UPE,115
Nexperia USA Inc.

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UFDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
67mOhm @ 2A, 4.5V
title:
PMDPB58UPE,115
Vgs(th) (Max) @ Id:
950mV @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
PMDPB58UPE,115 Models
Current - Continuous Drain (Id) @ 25°C:
3.6A
edacadModelUrl:
/en/models/4020967
Configuration:
2 P-Channel (Dual)
Manufacturer:
Nexperia USA Inc.
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
804pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
9.5nC @ 4.5V
Supplier Device Package:
6-HUSON (2x2)
Packaging:
Tape & Reel (TR)
Power - Max:
515mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PMDPB58
ECCN:
EAR99
Checking for live stock

This is manufactured by Nexperia USA Inc.. The manufacturer part number is PMDPB58UPE,115. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. It has a maximum Rds On and voltage of 67mohm @ 2a, 4.5v. The typical Vgs (th) (max) of the product is 950mv @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.6a. The product is available in 2 p-channel (dual) configuration. The nexperia usa inc.'s product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 804pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 9.5nc @ 4.5v. 6-huson (2x2) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 515mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to pmdpb58, a base product number of the product. The product is designated with the ear99 code number.

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PMDPB58UPE Datasheet Update 5/Nov/2015(PCN Design/Specification)
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Mult DEV Label Change 12/Jun/2024(PCN Design/Specification)
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PMDPB58UPE(Datasheets)
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Label Chg 12/Mar/2017(PCN Packaging)
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Mult DEV Tape Change 04/Mar/2024(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PMDPB58UPE,115 and the best services all around the world ET11790729. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PMDPB58UPE,115, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. PMDPB58UPE,115 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PMDPB58UPE,115. We stock a large inventory containing a wide range of variety ET11790729, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. PMDPB58UPE,115. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11790729 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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