Toshiba Semiconductor and Storage SSM6N7002BFU,LF
Product Information
FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
3.1V @ 250µA
Operating Temperature:
150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Gate Charge (Qg) (Max) @ Vgs:
-
Rds On (Max) @ Id, Vgs:
2.1Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C:
200mA
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
17pF @ 25V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
US6
Power - Max:
300mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6N7002
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N7002BFU,LF. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 3.1v @ 250µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 2.1ohm @ 500ma, 10v. The continuous current drain at 25°C is 200ma. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 17pf @ 25v. The product is available in surface mount configuration. us6 is the supplier device package value. The maximum power of the product is 300mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6n7002, a base product number of the product. The product is designated with the ear99 code number.
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