ON Semiconductor NTJD4105CT1G

NTJD4105CT1G ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NTJD4105
Detailed Description:
Mosfet Array N and P-Channel 20V, 8V 630mA, 775mA 270mW Surface Mount SC-88/SC70-6/SOT-363
Input Capacitance (Ciss) (Max) @ Vds:
46pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
3nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Drain to Source Voltage (Vdss):
20V, 8V
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
375mOhm @ 630mA, 4.5V
Supplier Device Package:
SC-88/SC70-6/SOT-363
Manufacturer Standard Lead Time:
51 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
270mW
Current - Continuous Drain (Id) @ 25°C:
630mA, 775mA
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTJD4105CT1G. The FET features of the product include logic level gate. Base Part Number: ntjd4105. It features mosfet array n and p-channel 20v, 8v 630ma, 775ma 270mw surface mount sc-88/sc70-6/sot-363. The product's input capacitance at maximum includes 46pf @ 20v. The maximum gate charge and given voltages include 3nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has a 20v, 8v drain to source voltage. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 375mohm @ 630ma, 4.5v. sc-88/sc70-6/sot-363 is the supplier device package value. It has typical 51 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 270mw. The continuous current drain at 25°C is 630ma, 775ma. The on semiconductor's product offers user-desired applications.

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NTJD4105C(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NTJD4105CT1G and the best services all around the world ET11708554. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NTJD4105CT1G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor NTJD4105CT1G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTJD4105CT1G. We stock a large inventory containing a wide range of variety ET11708554, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor NTJD4105CT1G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11708554 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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