Diodes Incorporated DMN3135LVT-7

DMN3135LVT-7 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
SOT-23-6 Thin, TSOT-23-6
Rds On (Max) @ Id, Vgs:
60mOhm @ 3.1A, 10V
title:
DMN3135LVT-7
Vgs(th) (Max) @ Id:
2.2V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
3.5A
Configuration:
2 N-Channel (Dual)
Manufacturer:
Diodes Incorporated
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
8 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
305pF @ 15V
Mounting Type:
Surface Mount
Series:
-
Gate Charge (Qg) (Max) @ Vgs:
4.1nC @ 4.5V
Supplier Device Package:
TSOT-26
Packaging:
Tape & Reel (TR)
Power - Max:
840mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN3135
ECCN:
EAR99
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMN3135LVT-7. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in sot-23-6 thin, tsot-23-6. It has a maximum Rds On and voltage of 60mohm @ 3.1a, 10v. The typical Vgs (th) (max) of the product is 2.2v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.5a. The product is available in 2 n-channel (dual) configuration. The diodes incorporated's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 305pf @ 15v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 4.1nc @ 4.5v. tsot-26 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 840mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmn3135, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev A/T Site 31/Mar/2021(PCN Assembly/Origin)
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DMN3135LVT(Datasheets)
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Diodes Environmental Compliance Cert(Environmental Information)

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