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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N55NU,LF(T. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 46 mohm @ 4a, 10v. It features mosfet array 2 n-channel (dual) 30v 4a 1w surface mount 6-µdfn(2x2). The product's input capacitance at maximum includes 280pf @ 15v. The maximum gate charge and given voltages include 2.5nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 100µa. It is available in the standard package of 1. Moreover, the product comes in 6-wdfn exposed pad. 6-µdfn(2x2) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1w. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 4a. Alternative Names include ssm6n55nulf(tct ssm6n55nulfct ssm6n55nulfct-nd. The toshiba semiconductor and storage's product offers user-desired applications.
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