Toshiba Semiconductor and Storage SSM6N16FUTE85LF

SSM6N16FUTE85LF Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage

Product Information

FET Feature:
-
HTSUS:
8541.21.0095
Vgs(th) (Max) @ Id:
1.1V @ 100µA
Operating Temperature:
150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Rds On (Max) @ Id, Vgs:
3Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs:
-
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
100mA
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
9.3pF @ 3V
standardLeadTime:
36 Weeks
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
US6
Power - Max:
200mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SSM6N16
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N16FUTE85LF. It is assigned with possible HTSUS value of 8541.21.0095. The typical Vgs (th) (max) of the product is 1.1v @ 100µa. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 3ohm @ 10ma, 4v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 100ma. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 9.3pf @ 3v. It has a long 36 weeks standard lead time. The product is available in surface mount configuration. us6 is the supplier device package value. The maximum power of the product is 200mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to ssm6n16, a base product number of the product. The product is designated with the ear99 code number.

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