EPC EPC2100ENG

EPC2100ENG EPC
EPC

Product Information

FET Feature:
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs:
8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 30V 10A (Ta), 40A (Ta) Surface Mount Die
Input Capacitance (Ciss) (Max) @ Vds:
475pF @ 15V, 1960pF @ 15V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 4mA, 2.5V @ 16mA
Series:
eGaN®
Gate Charge (Qg) (Max) @ Vgs:
4.9nC @ 15V, 19nC @ 15V
Supplier Device Package:
Die
Packaging:
Tray
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Package / Case:
Die
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
10A (Ta), 40A (Ta)
Manufacturer:
EPC
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This is 2100ENG manufactured by EPC. The manufacturer part number is EPC2100ENG. The FET features of the product include ganfet (gallium nitride). It has a maximum Rds On and voltage of 8.2mohm @ 25a, 5v, 2.1mohm @ 25a, 5v. It features mosfet array 2 n-channel (half bridge) 30v 10a (ta), 40a (ta) surface mount die. The product's input capacitance at maximum includes 475pf @ 15v, 1960pf @ 15v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 4ma, 2.5v @ 16ma. The product egan®, is a highly preferred choice for users. The maximum gate charge and given voltages include 4.9nc @ 15v, 19nc @ 15v. die is the supplier device package value. In addition, tray is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). Moreover, the product comes in die. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 10a (ta), 40a (ta). The epc's product offers user-desired applications.

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EPC2100 Datasheet(Datasheets)
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GaN Integration for Higher DC-DC Efficiency and Power Density(Mfg Application Notes)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative EPC EPC2100ENG and the best services all around the world ET11563691. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, EPC EPC2100ENG, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as EPC, commonly silicon.

Our EPC EPC2100ENG is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at EPC2100ENG. We stock a large inventory containing a wide range of variety ET11563691, differentiates by its unique features EPC. We also have discounts for potential customers and let it until most of them avail from EPC EPC2100ENG. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11563691 from leading EPC, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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