EPC EPC2102ENG

EPC2102ENG EPC
EPC

Product Information

FET Feature:
GaNFET (Gallium Nitride)
Rds On (Max) @ Id, Vgs:
4.4mOhm @ 20A, 5V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 60V 23A Surface Mount Die
Input Capacitance (Ciss) (Max) @ Vds:
830pF @ 30V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 7mA
Series:
eGaN®
Gate Charge (Qg) (Max) @ Vgs:
6.8nC @ 5V
Supplier Device Package:
Die
Packaging:
Tray
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Package / Case:
Die
Drain to Source Voltage (Vdss):
60V
Current - Continuous Drain (Id) @ 25°C:
23A
Manufacturer:
EPC
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This is 2102ENG manufactured by EPC. The manufacturer part number is EPC2102ENG. The FET features of the product include ganfet (gallium nitride). It has a maximum Rds On and voltage of 4.4mohm @ 20a, 5v. It features mosfet array 2 n-channel (half bridge) 60v 23a surface mount die. The product's input capacitance at maximum includes 830pf @ 30v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 7ma. The product egan®, is a highly preferred choice for users. The maximum gate charge and given voltages include 6.8nc @ 5v. die is the supplier device package value. In addition, tray is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). Moreover, the product comes in die. The product has a 60v drain to source voltage. The continuous current drain at 25°C is 23a. The epc's product offers user-desired applications.

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EPC2102(Datasheets)
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Assembling eGaN® FETs(Mfg Application Notes)
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Quick Reference - Die Removal(Mfg Application Notes)
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Quick Reference - Die Attach(Mfg Application Notes)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative EPC EPC2102ENG and the best services all around the world ET11547320. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, EPC EPC2102ENG, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as EPC, commonly silicon.

Our EPC EPC2102ENG is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at EPC2102ENG. We stock a large inventory containing a wide range of variety ET11547320, differentiates by its unique features EPC. We also have discounts for potential customers and let it until most of them avail from EPC EPC2102ENG. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11547320 from leading EPC, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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