Diodes Incorporated DMN2050LFDB-13

DMN2050LFDB-13 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
45mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
DMN2050LFDB-13 Models
Current - Continuous Drain (Id) @ 25°C:
3.3A
edacadModelUrl:
/en/models/4570606
Configuration:
2 N-Channel (Dual)
Manufacturer:
Diodes Incorporated
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
389pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
U-DFN2020-6 (Type B)
Packaging:
Tape & Reel (TR)
Power - Max:
730mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN2050
ECCN:
EAR99
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMN2050LFDB-13. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. It has a maximum Rds On and voltage of 45mohm @ 5a, 4.5v. The maximum gate charge and given voltages include 12nc @ 10v. The typical Vgs (th) (max) of the product is 1v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.3a. The product is available in 2 n-channel (dual) configuration. The diodes incorporated's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 389pf @ 10v. The product is available in surface mount configuration. u-dfn2020-6 (type b) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 730mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmn2050, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Chgs 4/Oct/2019(PCN Assembly/Origin)
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DMN2050LFDB(Datasheets)
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Diodes Environmental Compliance Cert(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Diodes Incorporated DMN2050LFDB-13 and the best services all around the world ET11547316. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Diodes Incorporated DMN2050LFDB-13, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Diodes Incorporated, commonly silicon.

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