Diodes Incorporated DMN2050LFDB-13

DMN2050LFDB-13 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.21.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-UDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
45mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs:
12nC @ 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
REACH Status:
REACH Unaffected
edacadModel:
DMN2050LFDB-13 Models
Current - Continuous Drain (Id) @ 25°C:
3.3A
edacadModelUrl:
/en/models/4570606
Configuration:
2 N-Channel (Dual)
Manufacturer:
Diodes Incorporated
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
389pF @ 10V
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
U-DFN2020-6 (Type B)
Packaging:
Tape & Reel (TR)
Power - Max:
730mW
Technology:
MOSFET (Metal Oxide)
Base Product Number:
DMN2050
ECCN:
EAR99
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMN2050LFDB-13. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-udfn exposed pad. It has a maximum Rds On and voltage of 45mohm @ 5a, 4.5v. The maximum gate charge and given voltages include 12nc @ 10v. The typical Vgs (th) (max) of the product is 1v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 3.3a. The product is available in 2 n-channel (dual) configuration. The diodes incorporated's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. The product's input capacitance at maximum includes 389pf @ 10v. The product is available in surface mount configuration. u-dfn2020-6 (type b) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 730mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmn2050, a base product number of the product. The product is designated with the ear99 code number.

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Mult Dev Wafer Chgs 4/Oct/2019(PCN Assembly/Origin)
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DMN2050LFDB(Datasheets)
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Diodes Environmental Compliance Cert(Environmental Information)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Diodes Incorporated DMN2050LFDB-13 and the best services all around the world ET11547316. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Diodes Incorporated DMN2050LFDB-13, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Diodes Incorporated, commonly silicon.

Our Diodes Incorporated DMN2050LFDB-13 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at DMN2050LFDB-13. We stock a large inventory containing a wide range of variety ET11547316, differentiates by its unique features Diodes Incorporated. We also have discounts for potential customers and let it until most of them avail from Diodes Incorporated DMN2050LFDB-13. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11547316 from leading Diodes Incorporated, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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