Microsemi Corporation APTMC120TAM33CTPAG

APTMC120TAM33CTPAG Microsemi Corporation
Microsemi Corporation

Product Information

FET Feature:
Silicon Carbide (SiC)
Rds On (Max) @ Id, Vgs:
33mOhm @ 60A, 20V
Detailed Description:
Mosfet Array 6 N-Channel (3-Phase Bridge) 1200V (1.2kV) 78A (Tc) 370W Chassis Mount SP6-P
Input Capacitance (Ciss) (Max) @ Vds:
2850pF @ 1000V
Gate Charge (Qg) (Max) @ Vgs:
148nC @ 20V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
2.2V @ 3mA (Typ)
Drain to Source Voltage (Vdss):
1200V (1.2kV)
Package / Case:
SP6
Supplier Device Package:
SP6-P
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
6 N-Channel (3-Phase Bridge)
Power - Max:
370W
Current - Continuous Drain (Id) @ 25°C:
78A (Tc)
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTMC120TAM33CTPAG. The FET features of the product include silicon carbide (sic). It has a maximum Rds On and voltage of 33mohm @ 60a, 20v. It features mosfet array 6 n-channel (3-phase bridge) 1200v (1.2kv) 78a (tc) 370w chassis mount sp6-p. The product's input capacitance at maximum includes 2850pf @ 1000v. The maximum gate charge and given voltages include 148nc @ 20v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 2.2v @ 3ma (typ). The product has a 1200v (1.2kv) drain to source voltage. Moreover, the product comes in sp6. sp6-p is the supplier device package value. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 6 n-channel (3-phase bridge). The maximum power of the product is 370w. The continuous current drain at 25°C is 78a (tc). The microsemi corporation's product offers user-desired applications.

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