Toshiba Semiconductor and Storage SSM6N7002BFE,LM

SSM6N7002BFE-LM Toshiba Semiconductor and Storage SSM6N7002BFE,LM
SSM6N7002BFE,LM
SSM6N7002BFE,LM
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
TLP570
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 60V 200mA 150mW Surface Mount ES6
Input Capacitance (Ciss) (Max) @ Vds:
17pF @ 25V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3.1V @ 250µA
Drain to Source Voltage (Vdss):
60V
Package / Case:
SOT-563, SOT-666
Rds On (Max) @ Id, Vgs:
2.1Ohm @ 500mA, 10V
Supplier Device Package:
ES6
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
150mW
Current - Continuous Drain (Id) @ 25°C:
200mA
Manufacturer:
Toshiba Semiconductor and Storage
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6N7002BFE,LM. The FET features of the product include logic level gate. Base Part Number: tlp570. It features mosfet array 2 n-channel (dual) 60v 200ma 150mw surface mount es6. The product's input capacitance at maximum includes 17pf @ 25v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3.1v @ 250µa. The product has a 60v drain to source voltage. Moreover, the product comes in sot-563, sot-666. It has a maximum Rds On and voltage of 2.1ohm @ 500ma, 10v. es6 is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 150mw. The continuous current drain at 25°C is 200ma. The toshiba semiconductor and storage's product offers user-desired applications.

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Mosfets Prod Guide(Datasheets)

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