Rohm Semiconductor QH8MA2TCR

QH8MA2TCR Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
QH8MA2
Detailed Description:
Mosfet Array N and P-Channel 30V 4.5A, 3A 1.25W Surface Mount TSMT8
Input Capacitance (Ciss) (Max) @ Vds:
365pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
8.4nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
35mOhm @ 4.5A, 10V
Supplier Device Package:
TSMT8
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.25W
Current - Continuous Drain (Id) @ 25°C:
4.5A, 3A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is QH8MA2TCR. The FET features of the product include logic level gate. Base Part Number: qh8ma2. It features mosfet array n and p-channel 30v 4.5a, 3a 1.25w surface mount tsmt8. The product's input capacitance at maximum includes 365pf @ 10v. The maximum gate charge and given voltages include 8.4nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. Moreover, the product comes in 8-smd, flat lead. It has a maximum Rds On and voltage of 35mohm @ 4.5a, 10v. tsmt8 is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 1.25w. The continuous current drain at 25°C is 4.5a, 3a. The rohm semiconductor's product offers user-desired applications.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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TSMT8M-Cu-HF Constitution Material List(Environmental Information)
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QH8MA2 ESD Data(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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TSMT8 TR Taping Spec(Datasheets)
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QH8MA2(Datasheets)
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Transistor, MOSFET Flammability(Other Related Documents)
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TSMT8 Part Marking(Other Related Documents)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor QH8MA2TCR and the best services all around the world ET11507321. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor QH8MA2TCR, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor QH8MA2TCR is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at QH8MA2TCR. We stock a large inventory containing a wide range of variety ET11507321, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor QH8MA2TCR. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11507321 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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