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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM120H29FG. The FET features of the product include standard. It has a maximum Rds On and voltage of 348mohm @ 17a, 10v. It features mosfet array 4 n-channel (h-bridge) 1200v (1.2kv) 34a 780w chassis mount sp6. The product's input capacitance at maximum includes 10300pf @ 25v. The maximum gate charge and given voltages include 374nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 5ma. The product power mos 7®, is a highly preferred choice for users. Moreover, the product comes in sp6. sp6 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (h-bridge). The maximum power of the product is 780w. The product has a 1200v (1.2kv) drain to source voltage. The continuous current drain at 25°C is 34a. The microsemi corporation's product offers user-desired applications.
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Our Microsemi Corporation APTM120H29FG is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at APTM120H29FG. We stock a large inventory containing a wide range of variety ET11507212, differentiates by its unique features Microsemi Corporation. We also have discounts for potential customers and let it until most of them avail from Microsemi Corporation APTM120H29FG. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11507212 from leading Microsemi Corporation, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
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