Nexperia USA Inc. PMDXB600UNELZ

PMDXB600UNELZ Nexperia USA Inc.
Nexperia USA Inc.

Product Information

FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
620mOhm @ 600mA, 4.5V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 600mA 380mW Surface Mount DFN1010B-6
Input Capacitance (Ciss) (Max) @ Vds:
21.3pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
0.7nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
950mV @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
6-XFDFN Exposed Pad
Supplier Device Package:
DFN1010B-6
Manufacturer Standard Lead Time:
13 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
380mW
Current - Continuous Drain (Id) @ 25°C:
600mA
Manufacturer:
Nexperia USA Inc.
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PMDXB600UNELZ. The FET features of the product include standard. It has a maximum Rds On and voltage of 620mohm @ 600ma, 4.5v. It features mosfet array 2 n-channel (dual) 20v 600ma 380mw surface mount dfn1010b-6. The product's input capacitance at maximum includes 21.3pf @ 10v. The maximum gate charge and given voltages include 0.7nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 950mv @ 250µa. The product has a 20v drain to source voltage. Moreover, the product comes in 6-xfdfn exposed pad. dfn1010b-6 is the supplier device package value. It has typical 13 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 380mw. The continuous current drain at 25°C is 600ma. The nexperia usa inc.'s product offers user-desired applications.

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PMDXB600UNEL(Datasheets)
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Label Chg 12/Mar/2017(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PMDXB600UNELZ and the best services all around the world ET11473846. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PMDXB600UNELZ, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. PMDXB600UNELZ is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PMDXB600UNELZ. We stock a large inventory containing a wide range of variety ET11473846, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. PMDXB600UNELZ. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11473846 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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