ON Semiconductor NTMD3P03R2G

NTMD3P03R2G ON Semiconductor
ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
NTMD3
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 30V 2.34A 730mW Surface Mount 8-SOIC
Input Capacitance (Ciss) (Max) @ Vds:
750pF @ 24V
Gate Charge (Qg) (Max) @ Vgs:
25nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
85mOhm @ 3.05A, 10V
Supplier Device Package:
8-SOIC
Manufacturer Standard Lead Time:
52 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
730mW
Current - Continuous Drain (Id) @ 25°C:
2.34A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is NTMD3P03R2G. The FET features of the product include logic level gate. Base Part Number: ntmd3. It features mosfet array 2 p-channel (dual) 30v 2.34a 730mw surface mount 8-soic. The product's input capacitance at maximum includes 750pf @ 24v. The maximum gate charge and given voltages include 25nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 250µa. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 85mohm @ 3.05a, 10v. 8-soic is the supplier device package value. It has typical 52 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 730mw. The continuous current drain at 25°C is 2.34a. The on semiconductor's product offers user-desired applications.

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N(T,V)MD3P03(Datasheets)
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Multiple Devices Copper Wire 20/Aug/2008(PCN Design/Specification)
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Mult MSL1 Pkg Chg 20/Dec/2018(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor NTMD3P03R2G and the best services all around the world ET11466715. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor NTMD3P03R2G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor NTMD3P03R2G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at NTMD3P03R2G. We stock a large inventory containing a wide range of variety ET11466715, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor NTMD3P03R2G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11466715 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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