Deliver to
United Kingdom
Enjoy 5% savings by entering the code 'SAVE5' when you spend £50 or more!
This is manufactured by Diodes Incorporated. The manufacturer part number is DMN2014LHAB-7. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.21.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-ufdfn exposed pad. It has a maximum Rds On and voltage of 13mohm @ 4a, 4.5v. The typical Vgs (th) (max) of the product is 1.1v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 9a. The product is available in 2 n-channel (dual) common drain configuration. The diodes incorporated's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 8 weeks standard lead time. The product's input capacitance at maximum includes 1550pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 16nc @ 4.5v. u-dfn2030-6 (type b) is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 800mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmn2014, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Diodes Incorporated DMN2014LHAB-7 and the best services all around the world ET11463947. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Diodes Incorporated DMN2014LHAB-7, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Diodes Incorporated, commonly silicon.
Our Diodes Incorporated DMN2014LHAB-7 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at DMN2014LHAB-7. We stock a large inventory containing a wide range of variety ET11463947, differentiates by its unique features Diodes Incorporated. We also have discounts for potential customers and let it until most of them avail from Diodes Incorporated DMN2014LHAB-7. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11463947 from leading Diodes Incorporated, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
Basket Total:
£ 0
