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Infineon Technologies BSO150N03MD G

BSO150N03MD-G Infineon Technologies BSO150N03MD G
Infineon Technologies

Product Information

FET Feature:
Logic Level Gate
Vgs(th) (Max) @ Id:
2V @ 250µA
Input Capacitance (Ciss) (Max) @ Vds:
1300pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
17nC @ 10V
Mounting Type:
Surface Mount
Standard Package:
1
Series:
OptiMOS™
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
15 mOhm @ 9.3A, 10V
Supplier Device Package:
PG-DSO-8
Manufacturer Standard Lead Time:
12 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Power - Max:
1.4W
Drain to Source Voltage (Vdss):
30V
Current - Continuous Drain (Id) @ 25°C:
8A
Manufacturer:
Infineon Technologies
RoHs Compliant
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This is manufactured by Infineon Technologies. The manufacturer part number is BSO150N03MD G. The FET features of the product include logic level gate. The typical Vgs (th) (max) of the product is 2v @ 250µa. The product's input capacitance at maximum includes 1300pf @ 15v. The maximum gate charge and given voltages include 17nc @ 10v. The product is available in surface mount configuration. It is available in the standard package of 1. The product optimos™, is a highly preferred choice for users. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 15 mohm @ 9.3a, 10v. pg-dso-8 is the supplier device package value. It has typical 12 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). Its typical moisture sensitivity level is 3 (168 hours). The maximum power of the product is 1.4w. The product has a 30v drain to source voltage. The continuous current drain at 25°C is 8a. The infineon technologies's product offers user-desired applications.

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Infineon Technologies BSO150N03MD G and the best services all around the world ET11425252. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Infineon Technologies BSO150N03MD G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Infineon Technologies, commonly silicon.

Our Infineon Technologies BSO150N03MD G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at BSO150N03MD G. We stock a large inventory containing a wide range of variety ET11425252, differentiates by its unique features Infineon Technologies. We also have discounts for potential customers and let it until most of them avail from Infineon Technologies BSO150N03MD G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11425252 from leading Infineon Technologies, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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