Category:
Power MOSFET
Dimensions:
2.9 x 1.6 x 0.9mm
Maximum Continuous Drain Current:
150 mA
Transistor Material:
Si
Width:
1.6mm
Transistor Configuration:
Common Source
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.3V
Maximum Drain Source Resistance:
12.8 Ω
Package Type:
CPH
Number of Elements per Chip:
2
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
1.58 nC @ 10 V
Channel Type:
N
Typical Input Capacitance @ Vds:
7 pF @ 10 V
Length:
2.9mm
Pin Count:
5
Typical Turn-Off Delay Time:
155 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
250 mW
Maximum Gate Source Voltage:
-10 V, +10 V
Height:
0.9mm
Typical Turn-On Delay Time:
19 ns
FET Feature:
Logic Level Gate
Base Part Number:
CPH561
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 150mA 250mW Surface Mount 5-CPH
Input Capacitance (Ciss) (Max) @ Vds:
7pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
1.58nC @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
3.7Ohm @ 80mA, 4V
Drain to Source Voltage (Vdss):
30V
Package / Case:
5-SMD, Gull Wing
Supplier Device Package:
5-CPH
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
250mW
Current - Continuous Drain (Id) @ 25°C:
150mA
Manufacturer:
ON Semiconductor
