Nexperia USA Inc. PHN203,518

PHN203-518 Nexperia USA Inc. PHN203,518
Nexperia USA Inc.

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
2V @ 1mA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
30mOhm @ 7A, 10V
Gate Charge (Qg) (Max) @ Vgs:
14.6nC @ 10V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
6.3A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
2 (1 Year)
Input Capacitance (Ciss) (Max) @ Vds:
560pF @ 20V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
8-SO
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PHN203
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PHN203,518. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 2v @ 1ma. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 30mohm @ 7a, 10v. The maximum gate charge and given voltages include 14.6nc @ 10v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 6.3a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 2 (1 year). The product's input capacitance at maximum includes 560pf @ 20v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. 8-so is the supplier device package value. The maximum power of the product is 2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to phn203, a base product number of the product. The product is designated with the ear99 code number.

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2017 Year-End EOL 8/Jan/2018(PCN Obsolescence/ EOL)
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PHN203(Datasheets)
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Label Chg 12/Mar/2017(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PHN203,518 and the best services all around the world ET11388349. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PHN203,518, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. PHN203,518 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PHN203,518. We stock a large inventory containing a wide range of variety ET11388349, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. PHN203,518. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11388349 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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