Maximum Drain Source Voltage:
20 V
Typical Gate Charge @ Vgs:
3.7 nC @ 4.5 V, 5.5 nC @ 4.5 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
2.3 W
Maximum Gate Source Voltage:
-8 V, +8 V
Maximum Gate Threshold Voltage:
1V
Height:
0.75mm
Width:
2mm
Length:
2mm
Maximum Drain Source Resistance:
120 mΩ, 200 mΩ
Package Type:
WDFN
Number of Elements per Chip:
2
Minimum Operating Temperature:
-55 °C
Maximum Continuous Drain Current:
4.1 A, 4.6 A
Transistor Material:
Si
Channel Type:
N, P
Maximum Operating Temperature:
+150 °C
Pin Count:
6
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
NTLJD3119
Detailed Description:
Mosfet Array N and P-Channel 20V 2.6A, 2.3A 710mW Surface Mount 6-WDFN (2x2)
Input Capacitance (Ciss) (Max) @ Vds:
271pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
3.7nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA
Series:
µCool™
Package / Case:
6-WDFN Exposed Pad
Rds On (Max) @ Id, Vgs:
65mOhm @ 3.8A, 4.5V
Supplier Device Package:
6-WDFN (2x2)
Manufacturer Standard Lead Time:
44 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
710mW
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
2.6A, 2.3A
Manufacturer:
ON Semiconductor
