Toshiba Semiconductor and Storage SSM6P47NU,LF(T

SSM6P47NU-LF-T Toshiba Semiconductor and Storage SSM6P47NU,LF(T
Toshiba Semiconductor and Storage

Product Information

FET Feature:
Logic Level Gate
Manufacturer Standard Lead Time:
16 Weeks
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 20V 4A 1W Surface Mount 6-UDFN (2x2)
Vgs(th) (Max) @ Id:
1V @ 1mA
Operating Temperature:
150°C (TJ)
Package / Case:
6-WDFN Exposed Pad
Current - Continuous Drain (Id) @ 25°C:
4A
Gate Charge (Qg) (Max) @ Vgs:
4.6nC @ 4.5V
Rds On (Max) @ Id, Vgs:
95 mOhm @ 1.5A, 4.5V
FET Type:
2 P-Channel (Dual)
Standard Package:
1
Manufacturer:
Toshiba Semiconductor and Storage
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
290pF @ 10V
Mounting Type:
Surface Mount
Supplier Device Package:
6-UDFN (2x2)
Packaging:
Cut Tape (CT)
Power - Max:
1W
Other Names:
SSM6P47NULF(TCT SSM6P47NULFCT SSM6P47NULFCT-ND
RoHs Compliant
Checking for live stock

This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is SSM6P47NU,LF(T. The FET features of the product include logic level gate. It has typical 16 weeks of manufacturer standard lead time. It features mosfet array 2 p-channel (dual) 20v 4a 1w surface mount 6-udfn (2x2). The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 6-wdfn exposed pad. The continuous current drain at 25°C is 4a. The maximum gate charge and given voltages include 4.6nc @ 4.5v. It has a maximum Rds On and voltage of 95 mohm @ 1.5a, 4.5v. It carries FET type 2 p-channel (dual). It is available in the standard package of 1. The toshiba semiconductor and storage's product offers user-desired applications. The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 290pf @ 10v. The product is available in surface mount configuration. 6-udfn (2x2) is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 1w. Alternative Names include ssm6p47nulf(tct ssm6p47nulfct ssm6p47nulfct-nd.

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Toshiba Semiconductor and Storage SSM6P47NU,LF(T and the best services all around the world ET11307383. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Toshiba Semiconductor and Storage SSM6P47NU,LF(T, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Toshiba Semiconductor and Storage, commonly silicon.

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