Infineon Technologies BSO615C G

BSO615C-G Infineon Technologies BSO615C G
Infineon Technologies

Product Information

FET Feature:
Logic Level Gate
Manufacturer Standard Lead Time:
12 Weeks
Vgs(th) (Max) @ Id:
2V @ 20µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Current - Continuous Drain (Id) @ 25°C:
3.1A, 2A
Gate Charge (Qg) (Max) @ Vgs:
22.5nC @ 10V
Rds On (Max) @ Id, Vgs:
110 mOhm @ 3.1A, 10V
FET Type:
N and P-Channel
Standard Package:
1
Manufacturer:
Infineon Technologies
Drain to Source Voltage (Vdss):
60V
Moisture Sensitivity Level (MSL):
3 (168 Hours)
Input Capacitance (Ciss) (Max) @ Vds:
380pF @ 25V
Mounting Type:
Surface Mount
Series:
SIPMOS®
Supplier Device Package:
PG-DSO-8
Packaging:
Cut Tape (CT)
Power - Max:
2W
Other Names:
BSO615CINCT
RoHs Compliant
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This is manufactured by Infineon Technologies. The manufacturer part number is BSO615C G. The FET features of the product include logic level gate. It has typical 12 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 2v @ 20µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). The continuous current drain at 25°C is 3.1a, 2a. The maximum gate charge and given voltages include 22.5nc @ 10v. It has a maximum Rds On and voltage of 110 mohm @ 3.1a, 10v. It carries FET type n and p-channel. It is available in the standard package of 1. The infineon technologies's product offers user-desired applications. The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 3 (168 hours). The product's input capacitance at maximum includes 380pf @ 25v. The product is available in surface mount configuration. The product sipmos®, is a highly preferred choice for users. pg-dso-8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 2w. Alternative Names include bso615cinct.

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BSO615C(Datasheets)
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Part Number Guide(Other Related Documents)
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Dry Packing Box Update 24/Sep/2014(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Infineon Technologies BSO615C G and the best services all around the world ET11294069. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Infineon Technologies BSO615C G, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Infineon Technologies, commonly silicon.

Our Infineon Technologies BSO615C G is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at BSO615C G. We stock a large inventory containing a wide range of variety ET11294069, differentiates by its unique features Infineon Technologies. We also have discounts for potential customers and let it until most of them avail from Infineon Technologies BSO615C G. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11294069 from leading Infineon Technologies, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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