Rohm Semiconductor US6J11TR

US6J11TR Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
*J11
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 12V 1.3A 320mW Surface Mount TUMT6
Input Capacitance (Ciss) (Max) @ Vds:
290pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:
2.4nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
12V
Package / Case:
6-SMD, Flat Leads
Rds On (Max) @ Id, Vgs:
260mOhm @ 1.3A, 4.5V
Supplier Device Package:
TUMT6
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
320mW
Current - Continuous Drain (Id) @ 25°C:
1.3A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is US6J11TR. The FET features of the product include logic level gate. Base Part Number: *j11. It features mosfet array 2 p-channel (dual) 12v 1.3a 320mw surface mount tumt6. The product's input capacitance at maximum includes 290pf @ 6v. The maximum gate charge and given voltages include 2.4nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 12v drain to source voltage. Moreover, the product comes in 6-smd, flat leads. It has a maximum Rds On and voltage of 260mohm @ 1.3a, 4.5v. tumt6 is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 320mw. The continuous current drain at 25°C is 1.3a. The rohm semiconductor's product offers user-desired applications.

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Transistor, MOSFET Level 1 MSL(Environmental Information)
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US6J11 ESD Data(Environmental Information)
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Transistor Whisker Info(Environmental Information)
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TUMT6 Constitution Material List(Environmental Information)
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TUMT6 TR Taping Spec(Datasheets)
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TUMT6D Inner Structure(Other Related Documents)
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Transistor, MOSFET Flammability(Other Related Documents)
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TUMT6 Part Marking(Other Related Documents)
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TUMT6 MOS Reliability Test(Other Related Documents)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor US6J11TR and the best services all around the world ET11233022. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor US6J11TR, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

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