Fairchild/ON Semiconductor FDG6301N_F085

FDG6301N_F085 Fairchild/ON Semiconductor
Fairchild/ON Semiconductor

Product Information

FET Feature:
Logic Level Gate
Manufacturer Standard Lead Time:
33 Weeks
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
6-TSSOP, SC-88, SOT-363
Current - Continuous Drain (Id) @ 25°C:
220mA
Gate Charge (Qg) (Max) @ Vgs:
0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs:
4 Ohm @ 220mA, 4.5V
FET Type:
2 N-Channel (Dual)
Standard Package:
1
Manufacturer:
Fairchild/ON Semiconductor
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
9.5pF @ 10V
Mounting Type:
Surface Mount
Series:
Automotive, AEC-Q101
Supplier Device Package:
SC-70-6
Packaging:
Cut Tape (CT)
Power - Max:
300mW
Other Names:
FDG6301N_F085CT
RoHs Compliant
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This is manufactured by Fairchild/ON Semiconductor. The manufacturer part number is FDG6301N_F085. The FET features of the product include logic level gate. It has typical 33 weeks of manufacturer standard lead time. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. The continuous current drain at 25°C is 220ma. The maximum gate charge and given voltages include 0.4nc @ 4.5v. It has a maximum Rds On and voltage of 4 ohm @ 220ma, 4.5v. It carries FET type 2 n-channel (dual). It is available in the standard package of 1. The fairchild/on semiconductor's product offers user-desired applications. The product has a 25v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 9.5pf @ 10v. The product is available in surface mount configuration. The product automotive, aec-q101, is a highly preferred choice for users. sc-70-6 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The maximum power of the product is 300mw. Alternative Names include fdg6301n_f085ct.

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FDG6301N_F085(Datasheets)
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Binary Year Code Marking 15/Jan/2014(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Fairchild/ON Semiconductor FDG6301N_F085 and the best services all around the world ET11217804. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Fairchild/ON Semiconductor FDG6301N_F085, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Fairchild/ON Semiconductor, commonly silicon.

Our Fairchild/ON Semiconductor FDG6301N_F085 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at FDG6301N_F085. We stock a large inventory containing a wide range of variety ET11217804, differentiates by its unique features Fairchild/ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from Fairchild/ON Semiconductor FDG6301N_F085. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11217804 from leading Fairchild/ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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