Diodes Incorporated ZXMC4559DN8TC

ZXMC4559DN8TC Diodes Incorporated
ZXMC4559DN8TC
Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
ZXMC4559
Detailed Description:
Mosfet Array N and P-Channel 60V 3.6A, 2.6A 2.1W Surface Mount 8-SO
Input Capacitance (Ciss) (Max) @ Vds:
1063pF @ 30V
Gate Charge (Qg) (Max) @ Vgs:
20.4nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
55mOhm @ 4.5A, 10V
Supplier Device Package:
8-SO
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
2.1W
Current - Continuous Drain (Id) @ 25°C:
3.6A, 2.6A
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is ZXMC4559DN8TC. The FET features of the product include logic level gate. Base Part Number: zxmc4559. It features mosfet array n and p-channel 60v 3.6a, 2.6a 2.1w surface mount 8-so. The product's input capacitance at maximum includes 1063pf @ 30v. The maximum gate charge and given voltages include 20.4nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa (min). The product has a 60v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 55mohm @ 4.5a, 10v. 8-so is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 2.1w. The continuous current drain at 25°C is 3.6a, 2.6a. The diodes incorporated's product offers user-desired applications.

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Mult Dev A/T Site 31/Mar/2021(PCN Assembly/Origin)
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ZXMC4559DN8TA(Datasheets)
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Diodes RoHS 3 Cert(Environmental Information)

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