Diodes Incorporated ZXMN3A04DN8TA

Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
ZXMN3
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 30V 6.5A 1.81W Surface Mount 8-SO
Input Capacitance (Ciss) (Max) @ Vds:
1890pF @ 15V
Gate Charge (Qg) (Max) @ Vgs:
36.8nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 250µA (Min)
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
20mOhm @ 12.6A, 10V
Supplier Device Package:
8-SO
Manufacturer Standard Lead Time:
32 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
1.81W
Current - Continuous Drain (Id) @ 25°C:
6.5A
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is ZXMN3A04DN8TA. The FET features of the product include logic level gate. Base Part Number: zxmn3. It features mosfet array 2 n-channel (dual) 30v 6.5a 1.81w surface mount 8-so. The product's input capacitance at maximum includes 1890pf @ 15v. The maximum gate charge and given voltages include 36.8nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 250µa (min). The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 20mohm @ 12.6a, 10v. 8-so is the supplier device package value. It has typical 32 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 1.81w. The continuous current drain at 25°C is 6.5a. The diodes incorporated's product offers user-desired applications.

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Mult Dev A/T Site 31/Mar/2021(PCN Assembly/Origin)
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ZXMN3A04DN8(Datasheets)
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Diodes RoHS 3 Cert(Environmental Information)

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