Maximum Drain Source Voltage:
30 V
Typical Gate Charge @ Vgs:
13 nC @ 10 V
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
1.5 W
Maximum Gate Source Voltage:
-20 V, +20 V
Maximum Gate Threshold Voltage:
2.6V
Height:
0.9mm
Width:
2.3mm
Length:
2.9mm
Maximum Drain Source Resistance:
82 mΩ
Package Type:
ECH
Number of Elements per Chip:
2
Maximum Continuous Drain Current:
5.5 A
Transistor Material:
Si
Channel Type:
P
Maximum Operating Temperature:
+150 °C
Pin Count:
8
Transistor Configuration:
Isolated
FET Feature:
Logic Level Gate
Base Part Number:
ECH8667
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 30V 5.5A 1.5W Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
600pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
13nC @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
39mOhm @ 2.5A, 10V
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-ECH
Manufacturer Standard Lead Time:
2 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
1.5W
Current - Continuous Drain (Id) @ 25°C:
5.5A
Manufacturer:
ON Semiconductor
