Vishay Siliconix SI4814BDY-T1-E3

SI4814BDY-T1-E3 Vishay Siliconix
Vishay Siliconix

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
18mOhm @ 10A, 10V
title:
SI4814BDY-T1-E3
Vgs(th) (Max) @ Id:
3V @ 250µA
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
10A, 10.5A
Configuration:
2 N-Channel (Half Bridge)
Manufacturer:
Vishay Siliconix
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
-
Mounting Type:
Surface Mount
Series:
LITTLE FOOT®
Gate Charge (Qg) (Max) @ Vgs:
10nC @ 4.5V
Supplier Device Package:
8-SOIC
Packaging:
Tape & Reel (TR)
Power - Max:
3.3W, 3.5W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
SI4814
ECCN:
EAR99
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This is manufactured by Vishay Siliconix. The manufacturer part number is SI4814BDY-T1-E3. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 18mohm @ 10a, 10v. The typical Vgs (th) (max) of the product is 3v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 10a, 10.5a. The product is available in 2 n-channel (half bridge) configuration. The vishay siliconix's product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product is available in surface mount configuration. The product little foot®, is a highly preferred choice for users. The maximum gate charge and given voltages include 10nc @ 4.5v. 8-soic is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 3.3w, 3.5w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to si4814, a base product number of the product. The product is designated with the ear99 code number.

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SIL-0392016 16/Dec/2016(PCN Obsolescence/ EOL)
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SI4814BDY(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Vishay Siliconix SI4814BDY-T1-E3 and the best services all around the world ET11085699. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Vishay Siliconix SI4814BDY-T1-E3, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Vishay Siliconix, commonly silicon.

Our Vishay Siliconix SI4814BDY-T1-E3 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SI4814BDY-T1-E3. We stock a large inventory containing a wide range of variety ET11085699, differentiates by its unique features Vishay Siliconix. We also have discounts for potential customers and let it until most of them avail from Vishay Siliconix SI4814BDY-T1-E3. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11085699 from leading Vishay Siliconix, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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