ON Semiconductor ECH8690-TL-H

ON Semiconductor

Product Information

FET Feature:
Logic Level Gate, 4V Drive
Base Part Number:
ECH8690
Detailed Description:
Mosfet Array N and P-Channel 60V 4.7A, 3.5A 1.5W Surface Mount 8-ECH
Input Capacitance (Ciss) (Max) @ Vds:
955pF @ 20V
Gate Charge (Qg) (Max) @ Vgs:
18nC @ 10V
Mounting Type:
Surface Mount
Rds On (Max) @ Id, Vgs:
55mOhm @ 2A, 10V
Drain to Source Voltage (Vdss):
60V
Package / Case:
8-SMD, Flat Lead
Supplier Device Package:
8-ECH
Manufacturer Standard Lead Time:
39 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
1.5W
Current - Continuous Drain (Id) @ 25°C:
4.7A, 3.5A
Manufacturer:
ON Semiconductor
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This is manufactured by ON Semiconductor. The manufacturer part number is ECH8690-TL-H. The FET features of the product include logic level gate, 4v drive. Base Part Number: ech8690. It features mosfet array n and p-channel 60v 4.7a, 3.5a 1.5w surface mount 8-ech. The product's input capacitance at maximum includes 955pf @ 20v. The maximum gate charge and given voltages include 18nc @ 10v. The product is available in surface mount configuration. It has a maximum Rds On and voltage of 55mohm @ 2a, 10v. The product has a 60v drain to source voltage. Moreover, the product comes in 8-smd, flat lead. 8-ech is the supplier device package value. It has typical 39 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 1.5w. The continuous current drain at 25°C is 4.7a, 3.5a. The on semiconductor's product offers user-desired applications.

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ECH8690(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative ON Semiconductor ECH8690-TL-H and the best services all around the world ET11045290. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, ON Semiconductor ECH8690-TL-H, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as ON Semiconductor, commonly silicon.

Our ON Semiconductor ECH8690-TL-H is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at ECH8690-TL-H. We stock a large inventory containing a wide range of variety ET11045290, differentiates by its unique features ON Semiconductor. We also have discounts for potential customers and let it until most of them avail from ON Semiconductor ECH8690-TL-H. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11045290 from leading ON Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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