Diodes Incorporated DMG4511SK4-13

Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
DMG4511
Detailed Description:
Mosfet Array N and P-Channel, Common Drain 35V 5.3A, 5A 1.54W Surface Mount TO-252-4L
Input Capacitance (Ciss) (Max) @ Vds:
850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
18.7nC @ 10V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
3V @ 250µA
Drain to Source Voltage (Vdss):
35V
Package / Case:
TO-252-5, DPak (4 Leads + Tab), TO-252AD
Rds On (Max) @ Id, Vgs:
35mOhm @ 8A, 10V
Supplier Device Package:
TO-252-4L
Manufacturer Standard Lead Time:
45 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
N and P-Channel, Common Drain
Customer Reference:
Power - Max:
1.54W
Current - Continuous Drain (Id) @ 25°C:
5.3A, 5A
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMG4511SK4-13. The FET features of the product include logic level gate. Base Part Number: dmg4511. It features mosfet array n and p-channel, common drain 35v 5.3a, 5a 1.54w surface mount to-252-4l. The product's input capacitance at maximum includes 850pf @ 25v. The maximum gate charge and given voltages include 18.7nc @ 10v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 3v @ 250µa. The product has a 35v drain to source voltage. Moreover, the product comes in to-252-5, dpak (4 leads + tab), to-252ad. It has a maximum Rds On and voltage of 35mohm @ 8a, 10v. to-252-4l is the supplier device package value. It has typical 45 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type n and p-channel, common drain. The maximum power of the product is 1.54w. The continuous current drain at 25°C is 5.3a, 5a. The diodes incorporated's product offers user-desired applications.

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DMG4511SK4(Datasheets)
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Diodes RoHS 3 Cert(Environmental Information)

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