Renesas Electronics America UPA2690T1R-E2-AX
Product Information
FET Feature:
Logic Level Gate, 2.5V Drive
Rds On (Max) @ Id, Vgs:
42mOhm @ 2A, 4.5V
Detailed Description:
Mosfet Array N and P-Channel Complementary 20V 4A, 3A 2.3W Surface Mount 6-HUSON (2x2)
Input Capacitance (Ciss) (Max) @ Vds:
330pF @ 10V
Mounting Type:
Surface Mount
Gate Charge (Qg) (Max) @ Vgs:
4.5nC @ 10V
Drain to Source Voltage (Vdss):
20V
Package / Case:
6-PowerWDFN
Supplier Device Package:
6-HUSON (2x2)
Manufacturer Standard Lead Time:
16 Weeks
Packaging:
Tape & Reel (TR)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel Complementary
Customer Reference:
Power - Max:
2.3W
Current - Continuous Drain (Id) @ 25°C:
4A, 3A
Manufacturer:
Renesas Electronics America
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Yes. Our products in Transistors - FETs, MOSFETs - Arrays category are shipped in lowest possible time.
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Yes. We ship UPA2690T1R-E2-AX Internationally to many countries around the world.
This is manufactured by Renesas Electronics America. The manufacturer part number is UPA2690T1R-E2-AX. The FET features of the product include logic level gate, 2.5v drive. It has a maximum Rds On and voltage of 42mohm @ 2a, 4.5v. It features mosfet array n and p-channel complementary 20v 4a, 3a 2.3w surface mount 6-huson (2x2). The product's input capacitance at maximum includes 330pf @ 10v. The product is available in surface mount configuration. The maximum gate charge and given voltages include 4.5nc @ 10v. The product has a 20v drain to source voltage. Moreover, the product comes in 6-powerwdfn. 6-huson (2x2) is the supplier device package value. It has typical 16 weeks of manufacturer standard lead time. In addition, tape & reel (tr) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n and p-channel complementary. The maximum power of the product is 2.3w. The continuous current drain at 25°C is 4a, 3a. The renesas electronics america's product offers user-desired applications.
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