Deliver to
United Kingdom
Enjoy 5% savings by entering the code 'SAVE5' when you spend £50 or more!
This is manufactured by Diodes Incorporated. The manufacturer part number is DMN65D8LDWQ-13. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 6-tssop, sc-88, sot-363. It has a maximum Rds On and voltage of 6ohm @ 115ma, 10v. The typical Vgs (th) (max) of the product is 2v @ 250µa. In addition, it is reach unaffected. The continuous current drain at 25°C is 180ma. The product is available in 2 n-channel (dual) configuration. The diodes incorporated's product offers user-desired applications. The product has a 60v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). It has a long 24 weeks standard lead time. The product's input capacitance at maximum includes 22pf @ 25v. The product is available in surface mount configuration. The product is automotive, a grade of class. The maximum gate charge and given voltages include 0.87nc @ 10v. sot-363 is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 300mw. This product use mosfet (metal oxide) technology. Moreover, it corresponds to dmn65, a base product number of the product. The product is designated with the ear99 code number.
For more information please check the datasheets.
You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Diodes Incorporated DMN65D8LDWQ-13 and the best services all around the world ET11020057. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Diodes Incorporated DMN65D8LDWQ-13, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Diodes Incorporated, commonly silicon.
Our Diodes Incorporated DMN65D8LDWQ-13 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at DMN65D8LDWQ-13. We stock a large inventory containing a wide range of variety ET11020057, differentiates by its unique features Diodes Incorporated. We also have discounts for potential customers and let it until most of them avail from Diodes Incorporated DMN65D8LDWQ-13. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11020057 from leading Diodes Incorporated, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157
Basket Total:
£ 0
