Nexperia USA Inc. PHN210T,118

PHN210T-118 Nexperia USA Inc. PHN210T,118
Nexperia USA Inc.

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-65°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
100mOhm @ 2.2A, 10V
title:
PHN210T,118
Vgs(th) (Max) @ Id:
2.8V @ 1mA
REACH Status:
REACH Unaffected
edacadModel:
PHN210T,118 Models
Current - Continuous Drain (Id) @ 25°C:
-
edacadModelUrl:
/en/models/1157533
Configuration:
2 N-Channel (Dual)
Manufacturer:
Nexperia USA Inc.
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
250pF @ 20V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Gate Charge (Qg) (Max) @ Vgs:
6nC @ 10V
Supplier Device Package:
8-SO
Packaging:
Tape & Reel (TR)
Power - Max:
2W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PHN210
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PHN210T,118. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has -65°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 100mohm @ 2.2a, 10v. The typical Vgs (th) (max) of the product is 2.8v @ 1ma. In addition, it is reach unaffected. The product is available in 2 n-channel (dual) configuration. The nexperia usa inc.'s product offers user-desired applications. The product has a 30v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 250pf @ 20v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. The maximum gate charge and given voltages include 6nc @ 10v. 8-so is the supplier device package value. In addition, tape & reel (tr) is the available packaging type of the product. The maximum power of the product is 2w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to phn210, a base product number of the product. The product is designated with the ear99 code number.

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Mult DEV Label Change 12/Jun/2024(PCN Design/Specification)
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Logo Marking Update 30/Nov/2016(PCN Design/Specification)
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Mult Devices EOL 12/Jul/2018(PCN Obsolescence/ EOL)
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Mult Devices EOL 30/Jun/2018(PCN Obsolescence/ EOL)
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PHN210T(Datasheets)
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Label Chg 12/Mar/2017(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PHN210T,118 and the best services all around the world ET11018102. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PHN210T,118, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

Our Nexperia USA Inc. PHN210T,118 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at PHN210T,118. We stock a large inventory containing a wide range of variety ET11018102, differentiates by its unique features Nexperia USA Inc.. We also have discounts for potential customers and let it until most of them avail from Nexperia USA Inc. PHN210T,118. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET11018102 from leading Nexperia USA Inc., feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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