Maximum Continuous Drain Current:
60 A
Width:
3.4mm
Transistor Configuration:
Dual Base
Maximum Drain Source Voltage:
30 V
Maximum Gate Threshold Voltage:
1.2V
Maximum Drain Source Resistance:
8.3 mΩ
Package Type:
VSON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.75V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
10.5 nC
Channel Type:
P
Length:
3.4mm
Pin Count:
8
Channel Mode:
Enhancement
Mounting Type:
Surface Mount
Maximum Power Dissipation:
6 W
Series:
NexFET
Maximum Gate Source Voltage:
-8 V, +10 V
Height:
1.05mm
Minimum Operating Temperature:
-55 °C
Forward Diode Voltage:
1V
FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.2V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerTDFN
Rds On (Max) @ Id, Vgs:
6mOhm @ 12A, 8V
Gate Charge (Qg) (Max) @ Vgs:
8.3nC @ 4.5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
edacadModel:
CSD87334Q3DT Models
Current - Continuous Drain (Id) @ 25°C:
-
edacadModelUrl:
/en/models/5414497
Configuration:
2 N-Channel (Dual) Asymmetrical
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
30V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
1260pF @ 15V
standardLeadTime:
6 Weeks
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-VSON (3.3x3.3)
Power - Max:
6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD87334Q3
ECCN:
EAR99
