Rohm Semiconductor SH8M5TB1

SH8M5TB1 Rohm Semiconductor
SH8M5TB1
SH8M5TB1
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate
Base Part Number:
*M5
Detailed Description:
Mosfet Array N and P-Channel 30V 6A, 7A 2W Surface Mount 8-SOP
Input Capacitance (Ciss) (Max) @ Vds:
520pF @ 10V
Gate Charge (Qg) (Max) @ Vgs:
7.2nC @ 5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
2.5V @ 1mA
Drain to Source Voltage (Vdss):
30V
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
30mOhm @ 6A, 10V
Supplier Device Package:
8-SOP
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
N and P-Channel
Customer Reference:
Power - Max:
2W
Current - Continuous Drain (Id) @ 25°C:
6A, 7A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is SH8M5TB1. The FET features of the product include logic level gate. Base Part Number: *m5. It features mosfet array n and p-channel 30v 6a, 7a 2w surface mount 8-sop. The product's input capacitance at maximum includes 520pf @ 10v. The maximum gate charge and given voltages include 7.2nc @ 5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 2.5v @ 1ma. The product has a 30v drain to source voltage. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 30mohm @ 6a, 10v. 8-sop is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type n and p-channel. The maximum power of the product is 2w. The continuous current drain at 25°C is 6a, 7a. The rohm semiconductor's product offers user-desired applications.

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SH8M5(Datasheets)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Rohm Semiconductor SH8M5TB1 and the best services all around the world ET10993046. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Rohm Semiconductor SH8M5TB1, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Rohm Semiconductor, commonly silicon.

Our Rohm Semiconductor SH8M5TB1 is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at SH8M5TB1. We stock a large inventory containing a wide range of variety ET10993046, differentiates by its unique features Rohm Semiconductor. We also have discounts for potential customers and let it until most of them avail from Rohm Semiconductor SH8M5TB1. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET10993046 from leading Rohm Semiconductor, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157



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