Dimensions:
3.4 x 3.4 x 1.5mm
Maximum Continuous Drain Current:
60 A
Transistor Material:
Si
Width:
3.4mm
Transistor Configuration:
Series
Maximum Drain Source Voltage:
20 V
Maximum Gate Threshold Voltage:
2.1V
Maximum Drain Source Resistance:
3.3 mΩ, 8.8 mΩ
Package Type:
SON
Number of Elements per Chip:
2
Minimum Gate Threshold Voltage:
0.9V
Maximum Operating Temperature:
+150 °C
Typical Gate Charge @ Vgs:
4.8 nC @ 4.5 v, 9.2 nC @ 4.5 V
Channel Type:
N
Typical Input Capacitance @ Vds:
710 pF@ 12.5 V, 1280 pF@ 12.5 V
Length:
3.4mm
Pin Count:
8
Typical Turn-Off Delay Time:
8.5 ns, 15.8 ns
Mounting Type:
Surface Mount
Channel Mode:
Enhancement
Maximum Power Dissipation:
6 W
Series:
NexFET
Maximum Gate Source Voltage:
+8 V
Height:
1.5mm
Typical Turn-On Delay Time:
4.9 ns, 5.3 ns
Minimum Operating Temperature:
-55 °C
FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-PowerLDFN
Rds On (Max) @ Id, Vgs:
9.6mOhm @ 14A, 8V
Gate Charge (Qg) (Max) @ Vgs:
6.2nC @ 4.5V
Vgs(th) (Max) @ Id:
2.1V @ 250µA
REACH Status:
REACH Affected
edacadModel:
CSD86330Q3D Models
Current - Continuous Drain (Id) @ 25°C:
20A
edacadModelUrl:
/en/models/2533914
Configuration:
2 N-Channel (Half Bridge)
Manufacturer:
Texas Instruments
Drain to Source Voltage (Vdss):
25V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
6 Weeks
Input Capacitance (Ciss) (Max) @ Vds:
920pF @ 12.5V
Mounting Type:
Surface Mount
Series:
NexFET™
Supplier Device Package:
8-LSON (3.3x3.3)
Packaging:
Tape & Reel (TR)
Power - Max:
6W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
CSD86330Q3
ECCN:
EAR99
