Diodes Incorporated DMN2400UV-7

DMN2400UV-7 Diodes Incorporated
Diodes Incorporated

Product Information

FET Feature:
Logic Level Gate
Rds On (Max) @ Id, Vgs:
480mOhm @ 200mA, 5V
Detailed Description:
Mosfet Array 2 N-Channel (Dual) 20V 1.33A 530mW Surface Mount SOT-563
Input Capacitance (Ciss) (Max) @ Vds:
36pF @ 16V
Gate Charge (Qg) (Max) @ Vgs:
0.5nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
900mV @ 250µA
Drain to Source Voltage (Vdss):
20V
Package / Case:
SOT-563, SOT-666
Supplier Device Package:
SOT-563
Manufacturer Standard Lead Time:
15 Weeks
Packaging:
Cut Tape (CT)
Operating Temperature:
-55°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Dual)
Customer Reference:
Power - Max:
530mW
Current - Continuous Drain (Id) @ 25°C:
1.33A
Manufacturer:
Diodes Incorporated
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This is manufactured by Diodes Incorporated. The manufacturer part number is DMN2400UV-7. The FET features of the product include logic level gate. It has a maximum Rds On and voltage of 480mohm @ 200ma, 5v. It features mosfet array 2 n-channel (dual) 20v 1.33a 530mw surface mount sot-563. The product's input capacitance at maximum includes 36pf @ 16v. The maximum gate charge and given voltages include 0.5nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 900mv @ 250µa. The product has a 20v drain to source voltage. Moreover, the product comes in sot-563, sot-666. sot-563 is the supplier device package value. It has typical 15 weeks of manufacturer standard lead time. In addition, cut tape (ct) is the available packaging type of the product. The product has -55°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (dual). The maximum power of the product is 530mw. The continuous current drain at 25°C is 1.33a. The diodes incorporated's product offers user-desired applications.

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Mult Dev Wafer Fab Add 8/Aug/2012(PCN Assembly/Origin)
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DMN2400UV(Datasheets)
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Bond Wire 11/Nov/2011(PCN Design/Specification)
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Diodes RoHS 3 Cert(Environmental Information)

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