Rohm Semiconductor QS8J11TCR

QS8J11TCR Rohm Semiconductor
Rohm Semiconductor

Product Information

FET Feature:
Logic Level Gate, 1.5V Drive
Base Part Number:
QS8J11
Detailed Description:
Mosfet Array 2 P-Channel (Dual) 12V 3.5A 550mW Surface Mount TSMT8
Input Capacitance (Ciss) (Max) @ Vds:
2600pF @ 6V
Gate Charge (Qg) (Max) @ Vgs:
22nC @ 4.5V
Mounting Type:
Surface Mount
Vgs(th) (Max) @ Id:
1V @ 1mA
Drain to Source Voltage (Vdss):
12V
Package / Case:
8-SMD, Flat Lead
Rds On (Max) @ Id, Vgs:
43mOhm @ 3.5A, 4.5V
Supplier Device Package:
TSMT8
Packaging:
Cut Tape (CT)
Operating Temperature:
150°C (TJ)
FET Type:
2 P-Channel (Dual)
Customer Reference:
Power - Max:
550mW
Current - Continuous Drain (Id) @ 25°C:
3.5A
Manufacturer:
Rohm Semiconductor
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This is manufactured by Rohm Semiconductor. The manufacturer part number is QS8J11TCR. The FET features of the product include logic level gate, 1.5v drive. Base Part Number: qs8j11. It features mosfet array 2 p-channel (dual) 12v 3.5a 550mw surface mount tsmt8. The product's input capacitance at maximum includes 2600pf @ 6v. The maximum gate charge and given voltages include 22nc @ 4.5v. The product is available in surface mount configuration. The typical Vgs (th) (max) of the product is 1v @ 1ma. The product has a 12v drain to source voltage. Moreover, the product comes in 8-smd, flat lead. It has a maximum Rds On and voltage of 43mohm @ 3.5a, 4.5v. tsmt8 is the supplier device package value. In addition, cut tape (ct) is the available packaging type of the product. The product has 150°c (tj) operating temperature range. It carries FET type 2 p-channel (dual). The maximum power of the product is 550mw. The continuous current drain at 25°C is 3.5a. The rohm semiconductor's product offers user-desired applications.

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QS8J11(Datasheets)

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