Transphorm TPD3215M

TPD3215M Transphorm
Transphorm

Product Information

FET Feature:
-
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
-
Operating Temperature:
-40°C ~ 150°C (TJ)
Package / Case:
Module
Rds On (Max) @ Id, Vgs:
34mOhm @ 30A, 8V
Gate Charge (Qg) (Max) @ Vgs:
28nC @ 8V
Current - Continuous Drain (Id) @ 25°C:
70A (Tc)
Configuration:
2 N-Channel (Half Bridge)
Manufacturer:
Transphorm
Drain to Source Voltage (Vdss):
600V
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds:
2260pF @ 100V
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
Module
Packaging:
Bulk
Power - Max:
470W
Technology:
GaNFET (Gallium Nitride)
Base Product Number:
TPD3215
ECCN:
EAR99
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This is manufactured by Transphorm. The manufacturer part number is TPD3215M. It is assigned with possible HTSUS value of 8541.29.0095. The product has -40°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in module. It has a maximum Rds On and voltage of 34mohm @ 30a, 8v. The maximum gate charge and given voltages include 28nc @ 8v. The continuous current drain at 25°C is 70a (tc). The product is available in 2 n-channel (half bridge) configuration. The transphorm's product offers user-desired applications. The product has a 600v drain to source voltage. Its typical moisture sensitivity level is 1 (unlimited). The product's input capacitance at maximum includes 2260pf @ 100v. The product is available in through hole configuration. module is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 470w. This product use ganfet (gallium nitride) technology. Moreover, it corresponds to tpd3215, a base product number of the product. The product is designated with the ear99 code number.

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Mult Devices EOL 02/Apr/2018(PCN Obsolescence/ EOL)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Transphorm TPD3215M and the best services all around the world ET10910803. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Transphorm TPD3215M, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Transphorm, commonly silicon.

Our Transphorm TPD3215M is up-to-date, well-designed, and cutting-edge. Moreover, Transistors - FETs, MOSFETs - Arrays is 100% guaranteed, composed of refined materials, and fault-tolerant at TPD3215M. We stock a large inventory containing a wide range of variety ET10910803, differentiates by its unique features Transphorm. We also have discounts for potential customers and let it until most of them avail from Transphorm TPD3215M. Our website is user-friendly working as a middleman in the sense to help customers choose an excellent Transistors - FETs, MOSFETs - Arrays. For more information regarding ET10910803 from leading Transphorm, feel free to email us at sales@enrgtech.co.uk or make a phone call at +44 (0) 3303 800 157


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