Nexperia USA Inc. PHKD6N02LT,518

PHKD6N02LT-518 Nexperia USA Inc. PHKD6N02LT,518
Nexperia USA Inc.

Product Information

FET Feature:
Logic Level Gate
HTSUS:
8541.29.0095
Vgs(th) (Max) @ Id:
1.5V @ 250µA
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
Rds On (Max) @ Id, Vgs:
20mOhm @ 3A, 5V
Gate Charge (Qg) (Max) @ Vgs:
15.3nC @ 5V
RoHS Status:
ROHS3 Compliant
REACH Status:
REACH Unaffected
Current - Continuous Drain (Id) @ 25°C:
10.9A
Configuration:
2 N-Channel (Dual)
Package:
Tape & Reel (TR)
Drain to Source Voltage (Vdss):
20V
Moisture Sensitivity Level (MSL):
2 (1 Year)
Input Capacitance (Ciss) (Max) @ Vds:
950pF @ 10V
Mounting Type:
Surface Mount
Series:
TrenchMOS™
Supplier Device Package:
8-SO
Power - Max:
4.17W
Technology:
MOSFET (Metal Oxide)
Base Product Number:
PHKD6
ECCN:
EAR99
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This is manufactured by Nexperia USA Inc.. The manufacturer part number is PHKD6N02LT,518. The FET features of the product include logic level gate. It is assigned with possible HTSUS value of 8541.29.0095. The typical Vgs (th) (max) of the product is 1.5v @ 250µa. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). It has a maximum Rds On and voltage of 20mohm @ 3a, 5v. The maximum gate charge and given voltages include 15.3nc @ 5v. The product is rohs3 compliant. In addition, it is reach unaffected. The continuous current drain at 25°C is 10.9a. The product is available in 2 n-channel (dual) configuration. It is shipped in tape & reel (tr) package . The product has a 20v drain to source voltage. Its typical moisture sensitivity level is 2 (1 year). The product's input capacitance at maximum includes 950pf @ 10v. The product is available in surface mount configuration. The product trenchmos™, is a highly preferred choice for users. 8-so is the supplier device package value. The maximum power of the product is 4.17w. This product use mosfet (metal oxide) technology. Moreover, it corresponds to phkd6, a base product number of the product. The product is designated with the ear99 code number.

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2017 Year-End EOL 8/Jan/2018(PCN Obsolescence/ EOL)
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PHKD6N02LT(Datasheets)
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Label Chg 12/Mar/2017(PCN Packaging)
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All Dev Label Chgs 2/Aug/2020(PCN Packaging)

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Nexperia USA Inc. PHKD6N02LT,518 and the best services all around the world ET10887246. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Nexperia USA Inc. PHKD6N02LT,518, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Nexperia USA Inc., commonly silicon.

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