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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM100H45FT3G. The FET features of the product include standard. It has a maximum Rds On and voltage of 540mohm @ 9a, 10v. It features mosfet array 4 n-channel (h-bridge) 1000v (1kv) 18a 357w chassis mount sp3. The product's input capacitance at maximum includes 4350pf @ 25v. The maximum gate charge and given voltages include 154nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product has a 1000v (1kv) drain to source voltage. Moreover, the product comes in sp3. sp3 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (h-bridge). The maximum power of the product is 357w. The continuous current drain at 25°C is 18a. The microsemi corporation's product offers user-desired applications.
For more information please check the datasheets.
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