Microsemi Corporation APTM60A11FT1G

Microsemi Corporation

Product Information

FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
132mOhm @ 33A, 10V
Detailed Description:
Mosfet Array 2 N-Channel (Half Bridge) 600V 40A 390W Chassis Mount SP1
Input Capacitance (Ciss) (Max) @ Vds:
10552pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
330nC @ 10V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Drain to Source Voltage (Vdss):
600V
Package / Case:
SP1
Supplier Device Package:
SP1
Manufacturer Standard Lead Time:
36 Weeks
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
2 N-Channel (Half Bridge)
Power - Max:
390W
Current - Continuous Drain (Id) @ 25°C:
40A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM60A11FT1G. The FET features of the product include standard. It has a maximum Rds On and voltage of 132mohm @ 33a, 10v. It features mosfet array 2 n-channel (half bridge) 600v 40a 390w chassis mount sp1. The product's input capacitance at maximum includes 10552pf @ 25v. The maximum gate charge and given voltages include 330nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product has a 600v drain to source voltage. Moreover, the product comes in sp1. sp1 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 2 n-channel (half bridge). The maximum power of the product is 390w. The continuous current drain at 25°C is 40a. The microsemi corporation's product offers user-desired applications.

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APTM60A11UT1G(Datasheets)

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