Microsemi Corporation APTM20HM20STG

Microsemi Corporation

Product Information

FET Feature:
Standard
Rds On (Max) @ Id, Vgs:
24mOhm @ 44.5A, 10V
Detailed Description:
Mosfet Array 4 N-Channel (H-Bridge) 200V 89A 357W Chassis Mount SP4
Input Capacitance (Ciss) (Max) @ Vds:
6850pF @ 25V
Gate Charge (Qg) (Max) @ Vgs:
112nC @ 10V
Mounting Type:
Chassis Mount
Vgs(th) (Max) @ Id:
5V @ 2.5mA
Drain to Source Voltage (Vdss):
200V
Package / Case:
SP4
Supplier Device Package:
SP4
Manufacturer Standard Lead Time:
36 Weeks
Packaging:
Bulk
Operating Temperature:
-40°C ~ 150°C (TJ)
FET Type:
4 N-Channel (H-Bridge)
Power - Max:
357W
Current - Continuous Drain (Id) @ 25°C:
89A
Manufacturer:
Microsemi Corporation
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This is manufactured by Microsemi Corporation. The manufacturer part number is APTM20HM20STG. The FET features of the product include standard. It has a maximum Rds On and voltage of 24mohm @ 44.5a, 10v. It features mosfet array 4 n-channel (h-bridge) 200v 89a 357w chassis mount sp4. The product's input capacitance at maximum includes 6850pf @ 25v. The maximum gate charge and given voltages include 112nc @ 10v. The product is available in chassis mount configuration. The typical Vgs (th) (max) of the product is 5v @ 2.5ma. The product has a 200v drain to source voltage. Moreover, the product comes in sp4. sp4 is the supplier device package value. It has typical 36 weeks of manufacturer standard lead time. In addition, bulk is the available packaging type of the product. The product has -40°c ~ 150°c (tj) operating temperature range. It carries FET type 4 n-channel (h-bridge). The maximum power of the product is 357w. The continuous current drain at 25°C is 89a. The microsemi corporation's product offers user-desired applications.

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You are welcome to Enrgtech for online shopping, so exceptional in supplying electrical and electronic innovative Microsemi Corporation APTM20HM20STG and the best services all around the world ET10242553. We value our customers in assisting them to choose an excellent Transistors - FETs, MOSFETs - Arrays, which leads them to achieve their goals. The metal–oxide–semiconductor field-effect transistor, Microsemi Corporation APTM20HM20STG, also known as the metal–oxide–silicon transistor, is a form of insulated-gate field-effect transistor made by controlling the oxidation of a semiconductor from a leading brand known as Microsemi Corporation, commonly silicon.

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