Toshiba Semiconductor and Storage 2SA1943-O(S1,F

Toshiba Semiconductor and Storage

Product Information

Current - Collector (Ic) (Max):
15 A
HTSUS:
8541.29.0095
RoHS Status:
ROHS3 Compliant
Operating Temperature:
150°C (TJ)
Package / Case:
TO-3PL
DC Current Gain (hFE) (Min) @ Ic, Vce:
80 @ 1A, 5V
Frequency - Transition:
30MHz
title:
2SA1943-O(S1,F
Voltage - Collector Emitter Breakdown (Max):
230 V
Transistor Type:
PNP
Vce Saturation (Max) @ Ib, Ic:
3V @ 800mA, 8A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
standardLeadTime:
12 Weeks
Current - Collector Cutoff (Max):
5µA (ICBO)
Mounting Type:
Through Hole
Series:
-
Supplier Device Package:
TO-3P(L)
Packaging:
Tube
Power - Max:
150 W
ECCN:
EAR99
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This is manufactured by Toshiba Semiconductor and Storage. The manufacturer part number is 2SA1943-O(S1,F. The maximum collector current includes 15 a. It is assigned with possible HTSUS value of 8541.29.0095. The product is rohs3 compliant. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-3pl. Furthermore, 80 @ 1a, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 30mhz. The maximum collector emitter breakdown voltage of the product is 230 v. The transistor is a pnp type. The 3v @ 800ma, 8a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). It has a long 12 weeks standard lead time. In addition, 5µa (icbo) is the maximum current at collector cutoff. The product is available in through hole configuration. to-3p(l) is the supplier device package value. In addition, tube is the available packaging type of the product. The maximum power of the product is 150 w. The product is designated with the ear99 code number.

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