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This is manufactured by Diodes Incorporated. The manufacturer part number is ZTX857QSTZ. The maximum collector current includes 3 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs3 compliant. The maximum collector emitter breakdown voltage of the product is 300 v. The product has -55°c ~ 200°c (tj) operating temperature range. Moreover, the product comes in e-line-3, formed leads. Furthermore, 100 @ 500ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 80mhz. The 250mv @ 600ma, 3a is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a npn type. It is shipped in tape & box (tb) package . It has a long 40 weeks standard lead time. In addition, 50na is the maximum current at collector cutoff. The product is available in through hole configuration. e-line (to-92 compatible) is the supplier device package value. The maximum power of the product is 1.2 w. The product is designated with the ear99 code number.
For more information please check the datasheets.
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