NXP Semiconductors PBSS5160QAZ

NXP Semiconductors

Product Information

Current - Collector (Ic) (Max):
1 A
HTSUS:
8541.29.0075
RoHS Status:
RoHS non-compliant
Voltage - Collector Emitter Breakdown (Max):
60 V
Operating Temperature:
150°C (TJ)
Package / Case:
3-XDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 100mA, 2V
Frequency - Transition:
150MHz
Vce Saturation (Max) @ Ib, Ic:
460mV @ 50mA, 1A
REACH Status:
Vendor Undefined
Transistor Type:
PNP
Package:
Bulk
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1010D-3
Power - Max:
325 mW
ECCN:
EAR99
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This is manufactured by NXP Semiconductors. The manufacturer part number is PBSS5160QAZ. The maximum collector current includes 1 a. It is assigned with possible HTSUS value of 8541.29.0075. The product is rohs non-compliant. The maximum collector emitter breakdown voltage of the product is 60 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn exposed pad. Furthermore, 160 @ 100ma, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 150mhz. The 460mv @ 50ma, 1a is the maximum Vce saturation. In addition, it is vendor undefined. The transistor is a pnp type. It is shipped in bulk package . In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1010d-3 is the supplier device package value. The maximum power of the product is 325 mw. The product is designated with the ear99 code number.

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PBSS5160QA(Datasheets)

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