Renesas 2SA812B-T1B-AT

2SA812B-T1B-AT Renesas
Renesas

Product Information

Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0075
RoHS Status:
RoHS non-compliant
Voltage - Collector Emitter Breakdown (Max):
50 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
90 @ 1mA, 6V
Frequency - Transition:
180MHz
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
REACH Status:
REACH Unaffected
Transistor Type:
PNP
Package:
Bulk
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
3-MINIMOLD
Power - Max:
200 mW
ECCN:
EAR99
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This is manufactured by Renesas. The manufacturer part number is 2SA812B-T1B-AT. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is rohs non-compliant. The maximum collector emitter breakdown voltage of the product is 50 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 90 @ 1ma, 6v is the minimum DC current gain at given voltage. The transition frequency of the product is 180mhz. The 300mv @ 10ma, 100ma is the maximum Vce saturation. In addition, it is reach unaffected. The transistor is a pnp type. It is shipped in bulk package . In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. 3-minimold is the supplier device package value. The maximum power of the product is 200 mw. The product is designated with the ear99 code number.

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