NXP USA Inc. PBHV8515QA147

PBHV8515QA147 NXP USA Inc.
NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
500 mA
HTSUS:
8541.21.0095
RoHS Status:
Not applicable
Voltage - Collector Emitter Breakdown (Max):
150 V
Operating Temperature:
150°C (TJ)
Package / Case:
3-XDFN Exposed Pad
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 200mA, 10V
Frequency - Transition:
75MHz
Vce Saturation (Max) @ Ib, Ic:
200mV @ 100mA, 500mA
REACH Status:
Vendor Undefined
Transistor Type:
NPN
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
DFN1010D-3
Power - Max:
325 mW
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is PBHV8515QA147. The maximum collector current includes 500 ma. It is assigned with possible HTSUS value of 8541.21.0095. The product is not applicable. The maximum collector emitter breakdown voltage of the product is 150 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in 3-xdfn exposed pad. Furthermore, 100 @ 200ma, 10v is the minimum DC current gain at given voltage. The transition frequency of the product is 75mhz. The 200mv @ 100ma, 500ma is the maximum Vce saturation. In addition, it is vendor undefined. The transistor is a npn type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na is the maximum current at collector cutoff. The product is available in surface mount configuration. dfn1010d-3 is the supplier device package value. The maximum power of the product is 325 mw. The product is designated with the ear99 code number.

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PBHV8515QA(Datasheets)

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