onsemi NSS40300DDR2

NSS40300DDR2 onsemi
onsemi

Product Information

Current - Collector (Ic) (Max):
3A
HTSUS:
8541.21.0075
RoHS Status:
Not applicable
Voltage - Collector Emitter Breakdown (Max):
40V
Operating Temperature:
-55°C ~ 150°C (TJ)
Package / Case:
8-SOIC (0.154", 3.90mm Width)
DC Current Gain (hFE) (Min) @ Ic, Vce:
180 @ 1A, 2V
Frequency - Transition:
100MHz
title:
NSS40300DDR2
REACH Status:
Vendor Undefined
Manufacturer:
onsemi
Transistor Type:
2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic:
170mV @ 200mA, 2A
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
100nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
8-SOIC
Packaging:
Bulk
Power - Max:
653mW
ECCN:
EAR99
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This is manufactured by onsemi. The manufacturer part number is NSS40300DDR2. The maximum collector current includes 3a. It is assigned with possible HTSUS value of 8541.21.0075. The product is not applicable. The maximum collector emitter breakdown voltage of the product is 40v. The product has -55°c ~ 150°c (tj) operating temperature range. Moreover, the product comes in 8-soic (0.154", 3.90mm width). Furthermore, 180 @ 1a, 2v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. In addition, it is vendor undefined. The onsemi's product offers user-desired applications. The transistor is a 2 pnp (dual) type. The 170mv @ 200ma, 2a is the maximum Vce saturation. Its typical moisture sensitivity level is 1 (unlimited). In addition, 100na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. 8-soic is the supplier device package value. In addition, bulk is the available packaging type of the product. The maximum power of the product is 653mw. The product is designated with the ear99 code number.

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FAQs

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