NXP USA Inc. BC857C/DG/B4235

BC857C-DG-B4235 NXP USA Inc. BC857C/DG/B4235
NXP USA Inc.

Product Information

Current - Collector (Ic) (Max):
100 mA
HTSUS:
8541.21.0075
RoHS Status:
Not applicable
Voltage - Collector Emitter Breakdown (Max):
45 V
Operating Temperature:
150°C (TJ)
Package / Case:
TO-236-3, SC-59, SOT-23-3
DC Current Gain (hFE) (Min) @ Ic, Vce:
420 @ 2mA, 5V
Frequency - Transition:
100MHz
Vce Saturation (Max) @ Ib, Ic:
650mV @ 5mA, 100mA
REACH Status:
Vendor Undefined
Transistor Type:
PNP
Package:
Bulk
Moisture Sensitivity Level (MSL):
1 (Unlimited)
Current - Collector Cutoff (Max):
15nA (ICBO)
Mounting Type:
Surface Mount
Series:
-
Supplier Device Package:
TO-236AB
Power - Max:
250 mW
Base Product Number:
BC857
ECCN:
EAR99
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This is manufactured by NXP USA Inc.. The manufacturer part number is BC857C/DG/B4235. The maximum collector current includes 100 ma. It is assigned with possible HTSUS value of 8541.21.0075. The product is not applicable. The maximum collector emitter breakdown voltage of the product is 45 v. The product has 150°c (tj) operating temperature range. Moreover, the product comes in to-236-3, sc-59, sot-23-3. Furthermore, 420 @ 2ma, 5v is the minimum DC current gain at given voltage. The transition frequency of the product is 100mhz. The 650mv @ 5ma, 100ma is the maximum Vce saturation. In addition, it is vendor undefined. The transistor is a pnp type. It is shipped in bulk package . Its typical moisture sensitivity level is 1 (unlimited). In addition, 15na (icbo) is the maximum current at collector cutoff. The product is available in surface mount configuration. to-236ab is the supplier device package value. The maximum power of the product is 250 mw. Moreover, it corresponds to bc857, a base product number of the product. The product is designated with the ear99 code number.

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BC856W, BC857W, BC858W(Datasheets)

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